دیتاشیت BCP69
مشخصات دیتاشیت
| نام دیتاشیت |
BCP69
|
| حجم فایل |
50.268
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Nexperia BCP69
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
2A
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Power Dissipation (Pd):
650mW
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Transition Frequency (fT):
140MHz
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DC Current Gain (hFE@Ic,Vce):
85@500mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
20V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@2A,200mA
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Package:
SOT-223
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Manufacturer:
Nexperia
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
1.5A
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Voltage - Collector Emitter Breakdown (Max):
20V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
85 @ 500mA, 1V
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Power - Max:
1W
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
TO-261-4, TO-261AA
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Supplier Device Package:
SOT-223-4
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Base Part Number:
BCP69
